Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices
Reexamination Certificate
2005-03-08
2009-10-06
Vanore, David A (Department: 2881)
Radiant energy
Irradiation of objects or material
Irradiation of semiconductor devices
C250S492100, C250S492200, C250S492300
Reexamination Certificate
active
07598505
ABSTRACT:
The present invention discloses systems and methods for generating low energy, high current ion beams by scaling beamline dimensions and employing multiple beamlines. An array of beamlets is generated by an ion source. The beamlets then pass through a mass analysis module that permits selected ions to pass while blocking other ions and/or particles. The selected ions can then be accelerated to a desired energy level. Subsequently, the beamlets are diverged in horizontal and vertical directions to form a single low energy, high current ion beam.
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Axcelis Technologies Inc.
Eschweiler & Associates LLC
Smyth Andrew
Vanore David A
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