Chemistry: electrical and wave energy – Apparatus – Coating – forming or etching by sputtering
Patent
1997-05-20
1999-07-20
Nguyen, Nam
Chemistry: electrical and wave energy
Apparatus
Coating, forming or etching by sputtering
20429807, 20429809, 20429815, C23C 1456
Patent
active
059252278
ABSTRACT:
A multichamber sputtering apparatus which is used for manufacturing a semiconductor device and the like. In the apparatus, a plurality of sputter chambers and a degas chamber are airtightly connected to and arranged around a center transfer chamber, and processes including sputtering are continuously conducted in a vacuum. A plurality of heat stages are disposed in the degas chamber so that a plurality of substrates are simultaneously heated. In each heat stage, as required, a heating gas introducing unit for introducing a heating gas with causing the heating gas to make contact with the rear face of the substrate, a pressing mechanism which presses the substrate against the heat stage so as to enhance the surface contact between the heat stage and the substrate, or an electrostatic chucking mechanism is disposed.
REFERENCES:
patent: 4978412 (1990-12-01), Aoki et al.
patent: 4994162 (1991-02-01), Armstrong et al.
patent: 5067218 (1991-11-01), Williams
patent: 5267607 (1993-12-01), Wada
patent: 5310410 (1994-05-01), Begin et al.
patent: 5504043 (1996-04-01), Ngan et al.
patent: 5618350 (1997-04-01), Ishikawa et al.
Ishihara Masahito
Kobayashi Masahiko
Takahashi Nobuyuki
Anelva Corporation
McDonald Rodney G.
Nguyen Nam
LandOfFree
Multichamber sputtering apparatus does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Multichamber sputtering apparatus, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Multichamber sputtering apparatus will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1318956