Coherent light generators – Particular active media – Semiconductor
Patent
1992-06-25
1994-04-19
Epps, Georgia Y.
Coherent light generators
Particular active media
Semiconductor
372 48, 372 49, H01S 319
Patent
active
053053427
ABSTRACT:
Disclosed is a multibeam semiconductor laser array serving as a light source which is able to perform writing operations simultaneously by means of a plurality of laser beams. The multibeam semiconductor laser array includes a substrate; a plurality of semiconductor laser elements respectively provided on the substrate and drivable independently of one another; a fist window area disposed on a first end surface of a cavity forming the semiconductor laser elements, having a band cap wider than that of an active material layer of the semiconductor laser element, and not excitable electrically; a low reflectance coating applied to the first window area for reducing an optical reflectance; and a high reflectance coating disposed on a second end surface of the cavity forming the semiconductor laser elements for increasing the optical reflectance. According to the thus constructed multibeam semiconductor laser array, an optical cross talk can be eliminated, and a laser oscillation threshold value and a thermal cross talk can be minimized.
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Y. Bessho et al, "790 nm. High-Power Eight-Beam AlGaAs Semiconductor Laser," The Japan Society of Applied Physics (Abstract), 1991, p. 1030.
Setsuko Murata et al, "Experiments of improving 50-.mu.m-spaced 8-beam laser diode array characteristics by adding a heat-pass-wire," The Japan Society of Applied Physics (Abstract) 1991, p. 1030.
Epps Georgia Y.
Fuji 'Xerox Co., Ltd.
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