Multi-zone gas injection apparatus and method for microelectroni

Coating apparatus – Gas or vapor deposition – Multizone chamber

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

118723R, 118723MP, 118723E, 4272481, 4272551, 427569, C23C 1600

Patent

active

059762616

ABSTRACT:
A method and apparatus for multi-zone injection apparatus of multiple process gases onto a work piece during manufacture. The multi-zone injection apparatus uses a gas injection plate with multiple injection zones to deliver the multiple process gases into the chamber for deposition onto the work piece (for example, a silicon wafer). The gas showerhead separates the multiple process in a manner that avoids premixing the process gases, thereby minimizing gas-phase nucleation and particulate generation. The showerhead also allows real-time independent control over the gas flow rates in N channels to achieve deposition uniformity. Different gases can be configured in adjacent channels to provide M zones of multi-gas radial control.

REFERENCES:
patent: 4369031 (1983-01-01), Goldman et al.
patent: 4756272 (1988-07-01), Kessler et al.
patent: 4993358 (1991-02-01), Mahawili
patent: 5252178 (1993-10-01), Moslehi
patent: 5411590 (1995-05-01), Hawkins et al.
patent: 5453124 (1995-09-01), Moslehi et al.
patent: 5464499 (1995-11-01), Moslehi et al.
patent: 5540777 (1996-07-01), Barbee et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Multi-zone gas injection apparatus and method for microelectroni does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Multi-zone gas injection apparatus and method for microelectroni, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Multi-zone gas injection apparatus and method for microelectroni will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-2129481

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.