Multi-wavelength semiconductor lasers

Details Multi-wavelength semiconductor lasers Multi-wavelength semiconductor lasers

2005-08-30

2005-08-30

Wong, Don (Department: 2821)

Coherent light generators

Particular active media

Semiconductor

C372S043010

Reexamination Certificate

active

06937633

ABSTRACT:
A multi-wavelength semiconductor laser is formed by monolithically integrating a plurality of laser diodes (1, 2) with at least one isolator section (3) and a coupler (4), which couples the different emission wavelengths λ1, λ2into one output port (5). The isolator section can be either a light absorptive type or wavelength selective type, including a Bragg grating type isolator or a photonic bandgap crystal type isolator. The coupler is preferably a Y-junction coupler, but can also be a multi-branch waveguide coupler or a waveguide directional coupler.

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IEEE Photonics Technology Letters, vol. 11, No. 9, issued Sep. 1999 (IEEE), Ibsen Morten et al., “8- and 16-Channel All-Fiber DFB Laser WDM Transmitters with Integrated Pump Redundancy”, pp. 1114-1116.
Patent Abstracts of Japan, Publication No. 2000165328, Date of Appln. Publication Jun. 16, 2000; entitled “Alignment Data Decision System in Optical Communication Connection”; Inventors: Dr. Peter Winzer and Dr. Andras Kalmar; Applicant: Contraves Space AG; Appln No. 11153677; Appln. Date: Jun. 1, 1999.

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