Multi-wavelength semiconductor laser device

Details Multi-wavelength semiconductor laser device Multi-wavelength semiconductor laser device

2005-06-23

2008-12-02

Harvey, Minsun (Department: 2828)

Coherent light generators

Particular resonant cavity

Specified cavity component

C372S050120, C372S050100

Reexamination Certificate

active

07460579

ABSTRACT:
A semiconductor laser device comprises: a substrate having a top surface divided into a first region and a second region; a high-output LD including a first conductivity-type clad layer, an active layer, and a second conductivity-type clad layer including an upper portion having a first ridge structure, sequentially formed on the first region of the substrate; and a low-output LD including a first conductivity-type clad layer, an active layer, and a second conductivity-type clad layer including an upper portion having a second ridge structure, sequentially formed on the second region of the substrate, wherein the first and second ridge structures are formed in such a manner that they are extended to both ends opposed to each other, the first ridge structure is bent at two or more bending positions, and the second ridge structure is rectilinear.

REFERENCES:
patent: 4833687 (1989-05-01), Hirata
patent: 5033053 (1991-07-01), Shimizu et al.
patent: 5465263 (1995-11-01), Bour et al.
patent: 6456429 (2002-09-01), Wu
patent: 6618420 (2003-09-01), Gen-Ei et al.
patent: 6628689 (2003-09-01), Okada et al.
patent: 6643310 (2003-11-01), Nemoto
patent: 2005/0105577 (2005-05-01), Fukuhisa et al.

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