Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – In combination with or also constituting light responsive...
Reexamination Certificate
2006-11-28
2006-11-28
Lee, Hsien-Ming (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
In combination with or also constituting light responsive...
C257S113000, C257S184000, C257S252000, C438S024000, C438S048000, C438S072000
Reexamination Certificate
active
07141826
ABSTRACT:
Disclosed is a multi-wavelength light receiving element. The multi-wavelength light receiving element includes a first type substrate. A first intrinsic layer is positioned on the first type substrate. A heavily-doped second-type buried layer is positioned on the first intrinsic layer. A second intrinsic layer is positioned on the heavily-doped second-type buried layer. A plurality of heavily-doped first-type fingers are shallowly embedded in the second intrinsic layer. A first type has a doped state that is opposite to a second type.
REFERENCES:
patent: 5518934 (1996-05-01), Forrest et al.
patent: 6043550 (2000-03-01), Kuhara et al.
patent: 6201234 (2001-03-01), Chow et al.
Patent Abstracts of Japan for JP08-109765 filed Apr. 30, 1996.
Kang Shin Jae
Ko Joo Yul
Kwon Kyoung Soo
Lee Hsien-Ming
Samsung Electro-Mechanics Co. Ltd.
LandOfFree
Multi-wavelength light receiving element and method of... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Multi-wavelength light receiving element and method of..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Multi-wavelength light receiving element and method of... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3697162