Coherent light generators – Particular active media – Semiconductor
Reexamination Certificate
2008-01-08
2008-01-08
Rodriguez, Armando (Department: 2828)
Coherent light generators
Particular active media
Semiconductor
C372S050100, C372S099000
Reexamination Certificate
active
10998921
ABSTRACT:
The present invention relates to a multi-wavelength laser diode, in which an oscillating structure includes a semiconductor substrate, and a lower cladding layer, an active layer and a ridge formed in their order on the semiconductor substrate. A first metal layer is formed on a first face of the oscillating structure including one end of the ridge, and made of a metal having a high reflectivity in a first wavelength range of at least a predetermined wavelength. A second metal layer is formed on the first metal layer, the second metal layer being made of a metal having a high reflectivity in a second wavelength range under the predetermined wavelength. The multi-wavelength laser diode can improve-the reflective layer structure to achieve a high reflectivity in the entire visible light range.
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Chinese Intellectual Property Office, Office Action mailed Apr. 13, 2007 and English Translation.
English Translation of Japanese Patent Office, Office Action mailed Dec. 12, 2006.
Japanese Patent Office, Office Action mailed Jul. 25, 2006 and English Translation.
Cho Sang Deog
Choi Hee Seok
Jang Tae Sung
Jeon Dong Min
Lowe Hauptman Ham & Berner
Rodriguez Armando
Samsung Electro-Mechanics Co. Ltd.
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