Multi-valued ROM using carbon-nanotube and nanowire FET

Details Multi-valued ROM using carbon-nanotube and nanowire FET Multi-valued ROM using carbon-nanotube and nanowire FET

2009-09-15

2011-11-22

Auduong, Gene N. (Department: 2827)

Static information storage and retrieval

Floating gate

Multiple values

C365S185180, C365S185280

Reexamination Certificate

active

08064253

ABSTRACT:
A multivalued memory device which includes a first multivalued memory transistor and a second multivalued memory transistor, wherein each transistor has a channel made from at least one carbon nanotube or nanowire, wherein data is stored by varying the number of carbon nanotubes or nanowires used in the channel, wherein the channel is the at least one carbon nanotube or nanowire which allows current to flow through it.

REFERENCES:
patent: 5719520 (1998-02-01), Au et al.
patent: 5721701 (1998-02-01), Ikebe et al.
patent: 6955937 (2005-10-01), Burke et al.
patent: 7262991 (2007-08-01), Zhang et al.
patent: 7342277 (2008-03-01), Radosavljevic et al.
patent: 7381983 (2008-06-01), Bae et al.
patent: 7608883 (2009-10-01), Radosavljevic et al.
patent: 2006/0183278 (2006-08-01), Bertin et al.
patent: 2006/0237857 (2006-10-01), Bertin et al.
Nishant Patil, et al, “Integrated Wafer-Scale growth and Transfer of Directional Carbon Nanotubes and Misaligned-Carbon-Nanotube-Immune Logic Structures”, Symposium on VLSI Techonology Digest of Technical Papers, 2008, pp. 205-206.
Ali Javey, et al., “Self-Aligned Ballistic Molecular Transistors and Electrically Parallel Nanotube Arrays”, NANO Letters, May 24, 2004, pp. 319-1322, vol. 4, No. 7, American Chemical Society.
David A. Rich, “A Survey of Multivalued Memories”, IEEE Transactions on Computers, Feb. 1986, pp. 99-106, vol. C-35, No. 2.
Sung Dae Suk, et al., “TSNWFET for SRAM Cell Application: Performance Variation and Process Dependency”, pp. 1-2, Advanced Technology Development Team, R&D Center, Samsung Electronics Co.

Affiliated with

Also associated with

Rating

Multi-valued ROM using carbon-nanotube and nanowire FET does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Multi-valued ROM using carbon-nanotube and nanowire FET, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Multi-valued ROM using carbon-nanotube and nanowire FET will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4254693