Active solid-state devices (e.g. – transistors – solid-state diode – Bulk effect device – Bulk effect switching in amorphous material
Reexamination Certificate
2011-04-26
2011-04-26
Smith, Bradley K (Department: 2894)
Active solid-state devices (e.g., transistors, solid-state diode
Bulk effect device
Bulk effect switching in amorphous material
C257S004000, C257S005000, C257S003000, C438S102000, C438S103000
Reexamination Certificate
active
07932508
ABSTRACT:
A multi-value recording phase-change memory device that can stably record multi-value information, and that can reproduce information with high reliability, comprises a first electrode layer26, a second electrode layer28, and a memory layer30provided between the first and second electrode layers26and28and containing a phase-change material layer formed from a phase-change material which is stable in either an amorphous phase or a crystalline phase at room temperature, wherein the memory layer30includes a plurality of mutually isolated sub-memory layers32, 34, 36, and38between the first and second electrode layers26and28.
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Hosaka Sumio
Nakasato Mayumi
Ono Takashi
Sone Hayato
Yoshimaru Masaki
Semiconductor Technology Academic Research Center
Smith Bradley K
Valentine Jami M
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