Static information storage and retrieval – Floating gate – Particular biasing
Reexamination Certificate
2007-12-11
2007-12-11
Tran, Andrew Q. (Department: 2824)
Static information storage and retrieval
Floating gate
Particular biasing
C365S185200, C365S185030, C365S185130, C365S185110
Reexamination Certificate
active
11063999
ABSTRACT:
A nonvolatile semiconductor memory device includes a plurality of memory cells holding memory cell information, a plurality of bit lines connected to the plurality of memory cells, the plurality of bit lines including a first bit line conected to a selected one of the plurality of memory cells and a plurality of second bit lines connected to non-selected memory cells, a plurality of reference cells supplying different reference currents respectively, and a read-out circuit, wherein, when reading the memory cell information, the read-out circuit is coupled to the first bit line connected to the selected memory cell and coupled to one of the plurality of reference cells through one of the plurality of second bit lines connected to the non-selected memory cells.
REFERENCES:
patent: 5822248 (1998-10-01), Satori et al.
patent: 6016276 (2000-01-01), Fuji
patent: 6370060 (2002-04-01), Takata et al.
patent: 6515906 (2003-02-01), Tedrow et al.
patent: 6816398 (2004-11-01), Sakai et al.
patent: 6885250 (2005-04-01), Le et al.
patent: 6912160 (2005-06-01), Yamada
patent: 6992931 (2006-01-01), Pekny
patent: 8-203291 (1996-08-01), None
patent: 09-198886 (1997-07-01), None
patent: 11-016379 (1999-01-01), None
patent: 11306771 (1999-11-01), None
patent: 2000-184190 (2000-06-01), None
patent: 2000-222896 (2000-08-01), None
patent: 2001-307494 (2001-11-01), None
patent: 2001-344983 (2001-12-01), None
patent: 2002008386 (2002-01-01), None
patent: 2003-077282 (2003-03-01), None
patent: WO 2004079746 (2004-09-01), None
English translation of JP-2002 008386, published Jan. 11, 2002, 127 pages.
Hatakeyama Atsushi
Ikeda Toshimi
Kawabata Kuninori
Kikutake Akira
Takeuchi Atsushi
Arent & Fox LLP
Fujitsu Limited
Tran Andrew Q.
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