Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Reexamination Certificate
2005-01-04
2005-01-04
Wilson, Allan R. (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
C257S461000
Reexamination Certificate
active
06838742
ABSTRACT:
A multiple-trench photosensor for use in a CMOS imager having an improved charge capacity. The multi-trench photosensor may be either a photogate or photodiode structure. The multi-trench photosensor provides the photosensitive element with an increased surface area compared to a flat photosensor occupying a comparable area on a substrate. The multi-trench photosensor also exhibits a higher charge capacity, improved dynamic range, and a better signal-to-noise ratio. Also disclosed are processes for forming the multi-trench photosensor.
REFERENCES:
patent: 4374700 (1983-02-01), Scott et al.
patent: 5055900 (1991-10-01), Fossum et al.
patent: 5151385 (1992-09-01), Yamamoto et al.
patent: 5173756 (1992-12-01), Wong et al.
patent: 5319604 (1994-06-01), Imondi et al.
patent: 5461425 (1995-10-01), Fowler et al.
patent: 5471515 (1995-11-01), Fossum et al.
patent: 5541402 (1996-07-01), Ackland et al.
patent: 5576763 (1996-11-01), Ackland et al.
patent: 5608243 (1997-03-01), Chi et al.
patent: 5614744 (1997-03-01), Merrill
patent: 5625210 (1997-04-01), Lee et al.
patent: 5705846 (1998-01-01), Merrill
patent: 5708263 (1998-01-01), Wong
patent: 5721425 (1998-02-01), Merrill
patent: 5731622 (1998-03-01), Sugiyama et al.
patent: 5747840 (1998-05-01), Merrill
patent: 5751032 (1998-05-01), Yu
patent: 5757045 (1998-05-01), Tsai et al.
patent: 5770878 (1998-06-01), Beasom
patent: 5841159 (1998-11-01), Lee et al.
patent: 5990515 (1999-11-01), Liu et al.
patent: 6001684 (1999-12-01), Shen
patent: 6008103 (1999-12-01), Hoepfner
patent: 6339248 (2002-01-01), Zhao et al.
Dickinson, A., et al.,A 256×256 CMOS Active Pixel Image Sensor with Motion Detection, 1995 IEEE International Solid-State Circuits Conference, pps. 226-227.
Dickinson, A., et al.,Standard CMOS Active Pixel Image Sensors for Multimedia Applications, Proceedings of Sixteenth Conference on Advanced Research in VLSI, Mar. 27-29, 1995, pps. 214-224.
Eid, E-S., et al.,A 256 × 256 CMOS Active Pixel Image Sensor, Proc. SPIE vol. 2415, Apr. 1995, pps. 265-275.
Fossum, E.,CMOS Image Sensors: Electronic Camera On A Chip, 1995 IEEE, pps. 17-25.
Fossum, E.,Low Power Camera-on-a-Chip Using CMOS Active Pixel Sensor Technology, 1995 IEEE, pps. 74-77.
Fossum, E.,Architectures for focal plane image processing, Optical Engineering, vol. 28, No 8, Aug. 1989, pps. 865-871.
Janesick, J., et al.,New advancements in charge-coupled device technology—sub-electron noise and 4096×4096 pixel CCDs, Proc. SPIE vol. 1242, 1990, pps. 223-237.
Kemeny, S.E., et al.,Update on focal-plane image processing research, Proc. SPIE vol. 1447, 1991, pps. 243-250.
Mendis, S., et al.,CMOS Active Pixel Image Sensor, IEEE Transactions on Electron Devices, vol. 41, No. 3, Mar. 1994, pps. 452-453.
Mendis, S.K., et al.,A 128 × 128 CMOS Active Pixel Image Sensor for Highly Integrated Imaging Systems, 1993 IEEE, pps. 583-586.
Mendis, S.K., et al.,CMOS Active Pixel Image Sensors for Highly Integrated Imaging Systems, IEEE Journal of Solid-State Circuits, vol. 32, No. 2, Feb. 1997, pps. 187-197.
Mendis, S.K., et al.,Design of a Low-Light-Level Image Sensor with On-Chip Sigma-Delta Analog-to-Digital Conversion, Proc. SPIE vol. 1900, Jul. 1993, pps. 31-39.
Mendis, S.K., et al.,Low-Light-Level Image Sensor with On-Chip Signal Processing, Proc. SPIE vol. 1952, Nov. 1993, pps. 23-33.
Mendis, S.K., et al.,Progress In CMOS Active Pixel Image Sensors, Proc. SPIE vol. 2172, May 1994, pps. 19-29.
Nakamura, J., et al.,CMOS Active Pixel Image Sensor with Simple Floating Gate Pixels, IEEE Transactions on Electron Devices, vol. 42, No. 9, Sep. 1995, pps. 1693-1694.
Nixon, R.H., et al.,256 × 256 CMOS Active Pixel Sensor Camera-on-a-Chip, IEEE Journal of Solid-State Circuits, vol. 31, No. 12, Dec. 1996, pps. 2046-2050.
Nixon, R.H., et al.,256×256 CMOS Active Pixel Sensor Camara-on-a-Chip, 1996 IEEE International Solid-State Circuits Conference, pps. 178-179.
Panicacci, R., et al.,Programmable multiresolution CMOS active pixel sensor, Proc. SPIE vol. 2654, Mar. 1996, pps. 72-79.
Panicacci, R.A., et al.,128Mb/s Multiport CMOS Binary Active-Pixel Image Sensor, 1996 IEEE International Solid-State Circuit Conference, pps. 100-101.
Yadid-Pecht, O., et al.,CMOS Active Pixel Sensor Star Tracker with Regional Electronic Shutter, IEEE Journal of Solid-State Circuits, vol. 32, No. 2, Feb. 1997, pps. 285-288.
Yadid-Pecht, O., et al.,Wide dynamic range APS star tracker, Proc. SPIE vol. 2654, Mar. 1996, pps. 82-92.
Zarnowski, J., et al.,Imaging options expand with CMOS technology, Laser Focus World, Jun. 1997, pps. 125-130.
Zhou, Z., et al.,A Cmos Imager with On-Chip Variable Resolution for Light-Adaptive Imaging, 1998 IEEE International Solid-State Circuits Conference, pps. 174-175.
Zhou, Z., et al.,A Digital CMOS Active Pixel Image Sensor For Multimedia Applications, Proc. SPIE vol. 2894, Sep. 1996, pps. 282-288.
Fossum, E., et al.,IEDM A 37×28mm2600k-Pixel CMOS APS Dental X-Ray Camera-on-a-Chip with Self-Triggered Readout, 1998 IEEE International Solid-State Circuits Conference, pps. 172-173.
Dickstein , Shapiro, Morin & Oshinsky, LLP
Wilson Allan R.
LandOfFree
Multi-trench region for accumulation of photo-generated... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Multi-trench region for accumulation of photo-generated..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Multi-trench region for accumulation of photo-generated... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3437647