Multi-tip semiconductor laser

Details Multi-tip semiconductor laser Multi-tip semiconductor laser

1992-07-16

1994-03-29

Epps, Georgia Y.

Coherent light generators

Particular active media

Semiconductor

372 44, 372 50, 257 79, 257 88, 257 89, H01S 319

Patent

active

052992187

ABSTRACT:
A multi-tip semiconductor laser comprises: a substrate; a cladding layer; an active layer formed of alkali-halide crystal on the cladding layer; at least a field emission tip formed on a surface of the substrate to have a substantially corn shape, the field emission tip being so arranged to confront the active layer; a vacuum space structure for providing a space between substrate and the cladding layer with the field emission tip confronting the active layer and for maintaining the space in a vacuum state; and an electrode structure for a producing electrostatic field between the field emission tip and the same in response to an external voltage supply such that the field emission tip emits an electron beam toward the active layer. The active layer may be doped and be made of organic crystal. It may further comprises a conducting layer covering at least a portion of said active layer. The active layer may be formed in a channel formed in the anode layer. The active layer may be formed in a capillary buried in a channel formed in the anode layer. This multi-tip semiconductor laser emits blue laser light.

REFERENCES:
patent: 5119386 (1992-06-01), Narusawa

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