Miscellaneous active electrical nonlinear devices – circuits – and – Gating – Utilizing three or more electrode solid-state device
Reexamination Certificate
2005-04-04
2008-10-28
Vu, David (Department: 2818)
Miscellaneous active electrical nonlinear devices, circuits, and
Gating
Utilizing three or more electrode solid-state device
C257S392000, C438S275000, C327S566000
Reexamination Certificate
active
07443224
ABSTRACT:
On a chip50A, disposed are macro cell20A not including a virtual power supply line and a leak-current-shielding MOS transistor of a high threshold voltage, and a leak-current-shielding MOS transistor cell51of the high threshold voltage. The transistor cell51has a gate line51G which is coincident with the longitudinal direction of the cell, is disposed along a side of a rectangular cell frame of the macro cell20A, and has a drain region51D connected to VDD pads60and61for external connection, the gate line51G connected to an I/O cell73and a source region51S connected to a VDD terminal of the macro cell20A. This VDD terminal functions as a terminal of a virtual power supply line V_VDD.
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Arent & Fox LLP
Fujitsu Limited
Taylor Earl N
Vu David
LandOfFree
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