Active solid-state devices (e.g. – transistors – solid-state diode – Gate arrays
Reexamination Certificate
2005-05-31
2005-05-31
Jackson, Jerome (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Gate arrays
C257S203000, C257S207000, C257S208000
Reexamination Certificate
active
06900478
ABSTRACT:
On a chip50A, disposed are macro cell20A not including a virtual power supply line and a leak-current-shielding MOS transistor of a high threshold voltage, and a leak-current-shielding MOS transistor cell51of the high threshold voltage. The transistor cell51has a gate line51G which is coincident with the longitudinal direction of the cell, is disposed along a side of a rectangular cell frame of the macro cell20A, and has a drain region51D connected to VDD pads60and61for external connection, the gate line51G connected to an I/O cell73and a source region51S connected to a VDD terminal of the macro cell20A. This VDD terminal functions as a terminal of a virtual power supply line V_VDD.
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ArentFox
Fenty Jesse A.
Fujitsu Limited
Jackson Jerome
LandOfFree
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