Multi-terminal resonant tunneling transistor

Details Multi-terminal resonant tunneling transistor Multi-terminal resonant tunneling transistor

1994-04-15

1996-05-07

Saadat, Mahshid

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

257 14, 257 23, 257197, 257563, H01L 2906, H01L 310328, H01L 2900

Patent

active

055148760

ABSTRACT:
A transistor according to the invention for simultaneously providing at least two current-voltage characteristics includes a base, a collector, and an emitter. At least one of the base, collector, and emitter includes a first layer grown using molecular beam epitaxy (MBE). The first layer includes a first strip having a first doping characteristic created using focused ion beam processing. A second strip has a second doping characteristic created by focused ion beam processing. A middle section of undoped material is located between the first and second strips. A resonant tunneling junction is grown on the first layer using MBE and includes a plurality of layers.

REFERENCES:
patent: 4328509 (1982-05-01), Lehing
patent: 5151618 (1992-09-01), Yokoyama et al.

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