Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal
Reexamination Certificate
2006-03-07
2006-03-07
Quach, T. N. (Department: 2826)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
C438S024000, C438S047000, C438S094000, C438S312000, C257S014000, C257S025000, C257S197000
Reexamination Certificate
active
07008806
ABSTRACT:
Disclosed is a method of determining causes of intrinsic oscillations in a double-barrier quantum-well intrinsic oscillator comprising developing an emitter quantum-well (EQW) from a double-barrier quantum-well system (DBQWS); coupling the EQW to a main quantum-well (MQW), wherein the MQW is defined by double-barrier heterostructures of a resonant tunneling diode; using energy subband coupling to induce quantum-based fluctuations in the EQW; creating intrinsic oscillations in electron density and electron current in the DBQWS; forming a distinct subband structure based on the intrinsic oscillations; and identifying a THz-frequency signal source based on the quantum-based fluctuations, wherein the intrinsic oscillations comprise maximum subband coherence, partial subband coherence, and minimum subband coherence, wherein the energy subband is a quantum mechanical energy subband, wherein the intrinsic oscillations occur proximate to a bias voltage point in the range of 0.224 V and 0.280 V, and wherein current oscillations are stable proximate to the bias voltage point.
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Woolard Dwight
Zhao Peiji
Quach T. N.
Stolarun Edward L.
The United States of America as represented by the Secretary of
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