Multi-step process to incorporate grain growth inhibitors in WC-

Details Multi-step process to incorporate grain growth inhibitors in WC- Multi-step process to incorporate grain growth inhibitors in WC-

1996-10-02

1999-03-23

Yee, Deborah

Metal treatment

Process of modifying or maintaining internal physical...

Carburizing or nitriding using externally supplied carbon or...

148423, 148425, C23C 820

Patent

active

058853723

ABSTRACT:
Grain growth inhibitors including vanadium carbide, chromium carbide, tantalum carbide, and niobium carbide are incorporated into a cobalt/tungsten carbide matrix during the formation of the cobalt/tungsten carbide matrix. A precursor powder is formed by combining in solution a cobalt composition, a tungsten composition and a grain growth inhibiting metal composition, which is then spray dried. The precursor compound is then carburized in carbon monoxide and carbon dioxide to form cobalt/tungsten carbide matrix. This is then further carburized in a hydrocarbon hydrogen gas at an elevated temperature to cause the grain growth inhibiting metal present to form the carbide. The second carburizing step is conducted with a carburizing gas having a carbon activity greater than about 2 for a relatively short period of time at 900.degree. C. to 1000.degree. C.

REFERENCES:
patent: 4234333 (1980-11-01), Ghandehari et al.
patent: 5230729 (1993-07-01), McCandlish et al.
patent: 5352269 (1994-10-01), Mcandlish et al.
Wu, L., Nanostructure Tungsten Carbide/Cobalt Alloys: Processing and Properties, Dissertation Abstracts International 54, (9) May 1993.

Affiliated with

Also associated with

Rating

Multi-step process to incorporate grain growth inhibitors in WC- does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Multi-step process to incorporate grain growth inhibitors in WC-, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Multi-step process to incorporate grain growth inhibitors in WC- will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2121506