Multi-step methods for chemical mechanical polishing silicon...

Details Multi-step methods for chemical mechanical polishing silicon... Multi-step methods for chemical mechanical polishing silicon...

2007-11-06

2007-11-06

Norton, Nadine (Department: 1765)

Etching a substrate: processes

Forming or treating optical article

C438S016000, C438S693000, C356S136000, C356S136000, C451S006000

Reexamination Certificate

active

11023862

ABSTRACT:
The present invention provides a method for polishing silica and silicon nitride on a semiconductor wafer comprising the steps of planarizing the silica with a first aqueous composition comprising by weight percent 0.01 to 5 carboxylic acid polymer, 0.02 to 6 abrasive, 0.01 to 10 polyvinylpyrrolidone, 0 to 5 cationic compound, 0 to 1 phthalic acid and salts, 0 to 5 zwitterionic compound and balance water, wherein the polyvinylpyrrolidone has an average molecular weight between 100 grams/mole to 1,000,000 grams/mole. The method further provides detecting an endpoint to the planarization, and clearing the silica with a second aqueous composition comprising by weight percent 0.001 to 1 quaternary ammonium compound, 0.001 to 1 phthalic acid and salts thereof, 0.01 to 5 carboxylic acid polymer, 0.01 to 5 abrasive and balance water.

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Simpson; STI Planarization using Fixed Abrasive Technology; Feb. 2002; Future Fab International, vol. 12.

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