Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Reexamination Certificate
2007-07-24
2007-07-24
Dang, Phuc T. (Department: 2818)
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
C438S707000
Reexamination Certificate
active
10881340
ABSTRACT:
An edge bead removal process is disclosed. The process includes providing a wafer having a feature layer, coating a photoresist on the feature layer, rotating the wafer, and removing an edge bead from the wafer by removing an edge bump portion from the edge bead and removing an edge region from the edge bead.
REFERENCES:
patent: 4839311 (1989-06-01), Riley et al.
patent: 5783097 (1998-07-01), Lo et al.
patent: 2004/0126923 (2004-07-01), Benson
Che Wu Ming
Cheng Chiu Sung
Juinn Huang Ching
Lei Hung Shih
Dang Phuc T.
Taiwan Semiconductor Manufacturing Co. Ltd.
Tung & Associates
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