Multi-state resistance changing memory with a word line...

Static information storage and retrieval – Addressing – Particular decoder or driver circuit

Reexamination Certificate

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Details

C365S163000, C365S148000

Reexamination Certificate

active

08085615

ABSTRACT:
A resistance changing memory unit cell includes a current control component operably coupled to a bit sense line, and a resistance changing memory element coupled between the current control component and a word line.

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PCT Search Report dated May 27, 2008 for PCT Application No. PCT/US2007/086780.

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