Static information storage and retrieval – Floating gate – Particular connection
Reexamination Certificate
2006-07-04
2006-07-04
Nguyen, Tuan T. (Department: 2824)
Static information storage and retrieval
Floating gate
Particular connection
C365S185030, C365S185280
Reexamination Certificate
active
07072217
ABSTRACT:
A multi-state NAND memory cell is comprised of two drain/source areas in a substrate. An oxide-nitride-oxide structure is formed above the substrate between the drain/source areas. The nitride layer acting as an asymmetric charge trapping layer. A control gate is located above the oxide-nitride-oxide structure. An asymmetrical bias on the drain/source areas causes the drain/source area with the higher voltage to inject an asymmetric distribution hole by gate induced drain leakage injection into the trapping layer substantially adjacent that drain/source area.
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Leffert Jay & Polglaze P.A.
Micro)n Technology, Inc.
Nguyen Tuan T.
Sofocleous Alexander
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