Multi state magnetic bubble domain cell for random access memori

Details Multi state magnetic bubble domain cell for random access memori Multi state magnetic bubble domain cell for random access memori

1975-11-17

1977-11-22

Moffitt, James W.

Static information storage and retrieval

Magnetic bubbles

Conductor propagation

365 34, 365 36, 365 40, G11C 1114

Patent

active

040598292

ABSTRACT:
A multi-state memory cell which uses magnetic bubble domains in uniaxial material is described. The cell includes a channel in which a number of stable bubble positions separated by barriers is formed and on which select conductors are positioned to switch a bubble from one stable position to another on a threshold basis by means of coincident currents. A cell in accordance with this invention may take the form of a four-state-two conductor cell, two-bistable-state two-conductor cell, multi-state six conductor cell and six-state three-conductor cell and include destructive or non-destructive readout.

REFERENCES:
patent: 3513452 (1970-05-01), Bobeck et al.
patent: 3715736 (1973-02-01), O'Donnell et al.
patent: 3717853 (1973-02-01), O'Donnell et al.

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