Multi-state flash memory defect management

Static information storage and retrieval – Floating gate – Particular connection

Patent

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Details

36518511, 36518533, G11C 1606

Patent

active

060348917

ABSTRACT:
A system is described which stores data intended for defective memory cells in a row of a memory array in an overhead location of the memory row. The data is stored in the overhead packet during a write operation, and is read from the overhead packet during a read operation. A defect location table for the row of the memory array is provided to identify when a defective memory cell is address;ed for either a read or write access operation. During a write operation, the correct data is stripped from incoming data for storing into the overhead packet. During a read operation, the correct data is inserted into an output data stream from the overhead packet. Data written to defective cells can be either a custom setting, a default setting, or the original data. Shift registers are described for holding good data during either a read or write operation. The number of shift registers used is determined by the number of states stored in a memory cell. The shift registers use a marker for alignment ofdata bits in a data stream.

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"Flash Memory 2 Meg X 8", Flash Memory Data Book, Micron Quantum Devices, Inc., 2-5:2-33, (1997).

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