Multi-stage voltage-boosting circuit with boosted back-gate bias

Details Multi-stage voltage-boosting circuit with boosted back-gate bias Multi-stage voltage-boosting circuit with boosted back-gate bias

1997-03-10

1999-04-06

Ton, My-Trang Nu

Miscellaneous active electrical nonlinear devices, circuits, and

Specific identifiable device, circuit, or system

With specific source of supply or bias voltage

327537, H03K 19094, G05F 110

Patent

active

058922679

ABSTRACT:
In a voltage-boosting circuit, field-effect transistors are coupled in series between an input terminal and an output terminal, and are coupled in parallel to respective capacitors which are driven by two complementary clock signals. The gate and drain of each field-effect transistor are interconnected. The field-effect transistors are disposed in at least two separate wells in a semiconductor substrate. Each well is coupled to one of the electrodes of one of the field-effect transistors in the well, providing an appropriate back-gate bias for the field-effect transistors in the well.

REFERENCES:
patent: 5180928 (1993-01-01), Choi
patent: 5625544 (1997-04-01), Kowshik et al.
patent: 5675279 (1997-10-01), Fujimoto et al.
patent: 5734290 (1998-03-01), Chang et al.

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