Multi-stage EPI process for forming semiconductor devices,...

Details Multi-stage EPI process for forming semiconductor devices,... Multi-stage EPI process for forming semiconductor devices,...

2006-11-28

2006-11-28

Trinh, Michael (Department: 2822)

Semiconductor device manufacturing: process

Forming bipolar transistor by formation or alteration of...

C438S335000, C438S341000, C438S359000

Reexamination Certificate

active

07141478

ABSTRACT:
The present invention is generally directed to a multi-stage epi process for forming semiconductor devices, and the resulting device. In one illustrative embodiment, the method comprises forming a first layer of epitaxial silicon above a surface of a semiconducting substrate, forming a second layer of epitaxial silicon above the first layer of epitaxial silicon, forming a third layer of epitaxial silicon above the second layer of epitaxial silicon, forming a trench isolation region that extends through at least the third layer of epitaxial silicon and forming a portion of a semiconductor device above the third layer of epitaxial silicon within an area defined by the isolation region. In one illustrative embodiment, the device comprises a substrate, a first layer of epitaxial silicon formed above the substrate, a second layer of epitaxial silicon formed above the first layer of epitaxial silicon, a third layer of epitaxial silicon formed above the second layer of epitaxial silicon, a trench isolation region that extends through at least the third layer of epitaxial silicon, the trench isolation region defining an active area, and at least one component of a semiconductor device formed in or above the third layer of epitaxial silicon within the active area.

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