Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Junction field effect transistor
Patent
1992-04-24
1994-03-01
Prenty, Mark V.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Junction field effect transistor
257283, 257476, 257618, H01L 2980, H01L 2948
Patent
active
052910423
ABSTRACT:
A multistage amplifier device including an amplifier at the first stage or each of active elements of amplifiers at plural stages containing the first stage and excluding the last stage which is formed of FETs 1a and 1b including a gate having a self-alignment structure, and amplifiers at the remaining subsequent stages which are formed of FETs 1c and 1d including a gate electrode on an operating layer sandwiched between source and drain high impurity density regions, one edge portion at a source side of the gate electrode being overlapped through an insulating layer with the source high impurity density region while the other edge portion at a drain side of the gate electrode does not expand to the drain high impurity density region.
REFERENCES:
patent: 5036017 (1991-07-01), Noda
Randall E. Lehmann and David D. Heston, "X-Band Monolithic Series Feedback LNA", IEEE Transactions on Microwave Theory and Techniques, vol. MTT-33, No. 12, pp. 1560-1566 (Dec. 1985).
Prenty Mark V.
Sumitomo Electric Industries Ltd.
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