Multi spectral sensor

Details Multi spectral sensor Multi spectral sensor

2009-12-14

2011-12-06

Luu, Chuong A. (Department: 2892)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

C438S022000, C438S047000, C438S197000, C438S342000

Reexamination Certificate

active

08071410

ABSTRACT:
A light sensor having a light conversion element between first and second electrodes is disclosed. The light conversion element includes a body of semiconductor material having first and second surfaces. The body of semiconductor material is of a first conductivity type and has doping elements in a concentration gradient that creates a first electrostatic field having a magnitude that varies monotonically from the first surface to the second surface. A bias circuit applies a variable potential between the first and second electrodes to create a second electrostatic field having a direction opposite to that of the first electrostatic field and a magnitude determined by the potential. One of the electrodes is transparent to light in a predetermined band of wavelengths. The body of semiconductor material can include an epitaxial body having a monotonically increasing concentration of a doping element as a function of the distance from one the surfaces.

REFERENCES:
patent: 2002/0196898 (2002-12-01), Kameshima
patent: 2006/0192938 (2006-08-01), Kawahito

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