Multi spectral sensor

Details Multi spectral sensor Multi spectral sensor

2005-07-14

2010-02-02

Luu, Chuong A. (Department: 2892)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

C257S219000, C257S222000, C257S226000

Reexamination Certificate

active

07655493

ABSTRACT:
A light sensor having a light conversion element between first and second electrodes is disclosed. The light conversion element includes a body of semiconductor material having first and second surfaces. The body of semiconductor material is of a first conductivity type and has doping elements in a concentration gradient that creates a first electrostatic field having a magnitude that varies monotonically from the first surface to the second surface. A bias circuit applies a variable potential between the first and second electrodes to create a second electrostatic field having a direction opposite to that of the first electrostatic field and a magnitude determined by the potential. One of the electrodes is transparent to light in a predetermined band of wavelengths. The body of semiconductor material can include an epitaxial body having a monotonically increasing concentration of a doping element as a function of the distance from one the surfaces.

REFERENCES:
patent: 5835458 (1998-11-01), Bischel et al.
patent: 5946559 (1999-08-01), Leedy
patent: 6144206 (2000-11-01), Goldfine et al.
patent: 6864126 (2005-03-01), Kim
patent: 7058245 (2006-06-01), Farahi

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