Multi-spectral planar photodiode infrared radiation detector pix

Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation

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Details

257461, H01L 3100, H01L 3106

Patent

active

060344075

ABSTRACT:
Multi-spectral planar photodiode pixels are provided in accordance with the present invention for simultaneously detecting multi-colors of infrared radiation. Each multispectral planar photodiode pixel includes a semiconductor substrate layer, a buffer layer of a first conductivity type material deposited on a semiconductor substrate layer, and a first color layer of the first conductivity type material deposited on the buffer layer. The multispectral planar photodiode pixel further includes a barrier layer of the first conductivity type material deposited on the first color layer, a second color layer of the first conductivity type material deposited on the barrier layer, and a cap layer of the first conductivity type material deposited on the second color layer. A first diode comprising a second conductivity type material is formed in the first color layer, and a second diode comprising a second conductivity type material is formed in the second layer.

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patent: 5009719 (1991-04-01), Yoshida
patent: 5149956 (1992-09-01), Norton
patent: 5373182 (1994-12-01), Norton
patent: 5391896 (1995-02-01), Wanlass
patent: 5825071 (1998-10-01), Takakura

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