Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Temperature
Reexamination Certificate
2005-03-15
2005-03-15
Hu, Shouxiang (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Temperature
C257S467000, C257S469000, C374S178000
Reexamination Certificate
active
06867470
ABSTRACT:
The present invention provides a temperature sensor that has high sensitivity and operates in a wide range of temperatures and VDD levels. The temperature sensor may be tailored to the application according to the conditions of temperature and VDD. The temperature sensor comprises five PNP junctions in series. The temperature sensor includes a switch that is configured to block out a predetermined number of the junctions. For example, two junctions may be blocked out. Depending on the state of the switch, the temperature sensor either blocks out a predetermined number of the junctions or operates with all of the junctions active. Blocking out the number of active junctions reduces the sensitivity of the temperature sensor for applications at low temperature and low VDD. The switch may be controlled automatically, or the switch may be hardwired. When the switch is adjusted automatically, a circuit could adjust the switch in response to the temperature information and Vdd conditions.
REFERENCES:
patent: 3777289 (1973-12-01), Makino
patent: 4395139 (1983-07-01), Namiki et al.
patent: 5062065 (1991-10-01), Lampe
patent: 5070322 (1991-12-01), Fujihira
patent: 5982221 (1999-11-01), Tuthill
patent: 20020014675 (2002-02-01), Matsumoto et al.
Hu Shouxiang
Merchant & Gould P.C.
National Semiconductor Corporation
Sullivan Timothy P.
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