Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal
Reexamination Certificate
2006-10-26
2008-10-07
Pert, Evan (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
C257S415000, C257S421000, C257SE31001, C438S050000, C438S052000
Reexamination Certificate
active
07432571
ABSTRACT:
Provided are a multi-scale cantilever structure having nano-sized holes prepared by anodic oxidation and a method of preparing the same. The multi-scale cantilever structure is prepared using anodic oxidation and electro-polishing so that a manufacturing process is simple and a manufacturing cost is inexpensive. In addition, the multi-scale cantilever structure has a porous structure having a plurality of nano-sized holes inside thereof, and thus a surface area of the cantilever structure can be maximized. Therefore, when the cantilever structure is used in a sensor, the sensor can have improved sensitivity and selectivity.
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Lee Jung Hyun
Lee Kun Hong
Lee Pyung Soo
Shin Nayoung
Mandala, Jr. Victor A
Pert Evan
Postech Academy-Industry Foundation
Postech Foundation
Rothwell Figg Ernst & Manbeck
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