Multi-resistive state material that uses dopants

Details Multi-resistive state material that uses dopants Multi-resistive state material that uses dopants

2006-07-04

2006-07-04

Blum, David S. (Department: 2813)

Semiconductor device manufacturing: process

Having magnetic or ferroelectric component

C438S054000, C438S385000

Reexamination Certificate

active

07071008

ABSTRACT:
A multi-resistive state material that uses dopants is provided. A multi-resistive state material can be used in a memory cell to store information. However, a multi-resistive state material may not have electrical properties that are appropriate for a memory device. Intentionally doping a multi-resistive state material to modify the electrical properties can, therefore, be desirable.

REFERENCES:
patent: 6204139 (2001-03-01), Liu et al.
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