Coating processes – Electrical product produced – Condenser or capacitor
Patent
1978-04-25
1979-12-18
Smith, John D.
Coating processes
Electrical product produced
Condenser or capacitor
357 15, 357 71, 427 85, 427 89, 427 91, 427124, 427125, H01L 2948
Patent
active
041795334
ABSTRACT:
A method for constructing systems of refractory layers for use in making gallium arsenide (GaAs) semiconductor devices, having gold as the conducting electrode, which devices are thermally stable when thermally stressed up to about 600.degree. C. for approximately 24 hours. The method forms refractory layers of either tantalum-platinum-tantalum, or tungsten-platinum-tungsten, or titanium tungsten-platinum to develop both the Schottky barrier to GaAs and the diffusion barrier between gold and GaAs. Each of the refractories are individually deposited, at specific temperatures in the range of 50.degree. C. to 175.degree. C., on a GaAs wafer within a vacuum. The metalized wafer cools to room temperature and is removed from the vacuum. Contacts are then typically defined on the wafer and the wafer is subsequently bonded.
REFERENCES:
patent: 3886580 (1975-05-01), Calviello
patent: 3906540 (1975-09-01), Hollins
patent: 4034394 (1977-07-01), Kamo et al.
patent: 4062103 (1977-12-01), Yamagishi
Christou et al., "A Comparison of Ta and Al Schottky-Barrier Gates for GaAs ETs Using Prespot Augex Electron Spectroscopy", Inst. Phys. Conf. Ser. No. 33(b), 1977, pp. 191-200.
Day et al., "Interdiffusion and Schottky-Barrier Height Variations in Au-W(Ti)/N-GaAs Contacts", J. Vac. Sci. Technology, vol. 14, No. 4, Jul./Aug. 1977.
Christou Aristos
Day Howard M.
Ranucci Vincent J.
Schneider Philip
Sciascia R. S.
Smith John D.
The United States of America as represented by the Secretary of
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