Multi quantum well laser with parallel injection

Details Multi quantum well laser with parallel injection Multi quantum well laser with parallel injection

1986-08-20

1988-06-21

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

372 44, 372 45, H01S 319

Patent

active

047529342

ABSTRACT:
A semiconductor laser having such a structure that a laser structure including a laser active region of multi quantum well structure, cladding layers and a cap layer is formed on a substrate, is disclosed in which both end regions of the laser active region in the quantum well layer is converted into mixed crystal by impurity induced intermixing so that a multi quantum well active region is sandwiched between mixed crystal regions, and impurity diffused regions are formed between the surface of the crystal and the mixed crystal regions, to form a current path and to inject carriers into the multi quantum well region in a direction parallel to the laser active layer. Thus, the semiconductor laser can modulate laser oscillation at a very high frequency, and moreover is readily fabricated or integrated.

REFERENCES:
patent: 4594603 (1986-06-01), Holonyak, Jr.
patent: 4644553 (1987-02-01), Van Ruyven et al.
J. E. Bowers et al., "High-Frequency Constricted Mesa Lasers"; Appl. Phys. Lett., vol. 47, No. 2, Jul. 1985, pp. 78-80.

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