Multi-quantum barrier laser

Details Multi-quantum barrier laser Multi-quantum barrier laser

1992-05-29

1994-06-07

Epps, Georgia Y.

Coherent light generators

Particular active media

Semiconductor

257 14, H01S 319

Patent

active

053196600

ABSTRACT:
A semiconductor laser device which provides enhanced carrier confinement. This device utilizes a single or multi-quantum well structure located between graded index confinement layers which are in turn between a pair of cladding layers. Semiconductor layers are selected such that the quantum well active region and confinement layers form a PN junction by being located between layers having N-type dopants on one side and P-type dopants on the second side for proper diode response. Within each confinement layer there is formed a plurality of multi-quantum barrier layers which serve to further increase the carrier confinement within the quantum well region by increasing the effective potential barrier within the graded index confinement region. The multi-quantum barrier layers are comprised of layers of the material forming the graded index confinement layers having alternating large and small concentrations of the material whose percentage is being varied in the graded index confinement layers.

REFERENCES:
patent: 4804639 (1989-02-01), Yablonovitch
patent: 5040186 (1991-08-01), Logan et al.
patent: 5091756 (1992-02-01), Iga et al.
patent: 5170407 (1992-12-01), Schubert et al.
patent: 5181086 (1993-01-01), Yoshida
Iga, et al, Electronic Reflectance of Multi-Quantum Barrier Electronic Letters, vol. 22, No. 9 pp. 1008-1010, Sep. 11, 1986.
Takagi, et al, Potential Barrier Height Analysis of AlGaInP Multi-Quantum Barrier, Applied Physics, vol. 29, No. 11 pp. L1977-L1980, Nov. 1990.
Kishino, et al, Enhanced Carrier Confinement Effect by Multi-Quantum Barrier in 660 nm GaInP.AlInP Visible Lasers, Applied Physics Letters, vol. 58, No. 17, pp. 1822-1824, Apr. 1991.

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