Multi-point emission type semiconductor laser device therefor

Details Multi-point emission type semiconductor laser device therefor Multi-point emission type semiconductor laser device therefor

1989-05-04

1990-04-10

Sykes, William L.

Coherent light generators

Particular active media

Semiconductor

372 23, 372 97, H01S 319

Patent

active

049167103

ABSTRACT:
A multi-point light emission type semiconductor laser device including a plurality of light emission points which are produced on a p type or n type semiconductor layer monolithically and are capable of being driven independently includes electrically insulating or semi-insulating semiconductor regions provided at intermediate portions of light emission points in the p type or n type semiconductor layer. A separation groove is further produced up to reaching the insulating or semi-insulating regions from the side opposite to the semiconductor layer. Thus, respective light emission points are perfectly electrically separated each other by this separation groove and the region.

REFERENCES:
patent: 4069463 (1978-01-01), McGroddy et al.
patent: 4531217 (1985-07-01), Kitamura
patent: 4547956 (1985-10-01), Bouadina et al.
patent: 4577321 (1986-03-01), Carney et al.
patent: 4747110 (1988-05-01), Takahasi et al.
Kume et al., "A New Monolithic . . . Disk Applications", IEEE Journal of Quantum Electronics, vol. QE-23, No. 6, Jun, 1987, pp. 898-901.

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