Amplifiers – With semiconductor amplifying device – Including plural amplifier channels
Reexamination Certificate
2011-03-29
2011-03-29
Pascal, Robert (Department: 2817)
Amplifiers
With semiconductor amplifying device
Including plural amplifier channels
C330S277000
Reexamination Certificate
active
07915959
ABSTRACT:
An embodiment of a multi-path, multi-oxide-thickness amplifier circuit includes a first amplifier having at least one thin-oxide output transistor, and a second amplifier having at least one thick-oxide output transistor. The first and second amplifiers are connected in parallel with each other between an input terminal and an output terminal of the amplifier circuit. The thin-oxide output transistor has a gate-oxide layer thickness that is less than a gate-oxide layer thickness of the thick-oxide output transistor.
REFERENCES:
patent: 6486821 (2002-11-01), Aude et al.
patent: 6958646 (2005-10-01), Colleran et al.
patent: 2002/0186077 (2002-12-01), Jantzi et al.
patent: 2008/0252376 (2008-10-01), Miao et al.
patent: WO 2008/080213 (2008-07-01), None
P. Bogner, et al., “A high signal swing Class AB earpiece amplifier in 65nm CMOS Technology,” 1-4244-0303-4/06 IEEE, pp. 372-375, 2006.
Tan et al., “Analysis of Deep Submicrom CMOS Transistor Vtlin and Idsat versus Channel Width”, Asian Pacific Microwave Conference Proceedings, IEEE, 2005.
International Search Report dated May 19, 2010, in counterpart international application No. PCT/US2010/026371.
Analog Devices Inc.
Kenyon & Kenyon LLP
Nguyen Khiem D
Pascal Robert
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