Semiconductor device manufacturing: process – Having organic semiconductive component
Reexamination Certificate
2006-10-24
2006-10-24
Baumeister, B. William (Department: 2891)
Semiconductor device manufacturing: process
Having organic semiconductive component
C438S149000, C438S151000, C438S082000, C257S040000, C257S290000, C257SE51007, C257SE21255, C257SE21582, C257SE21272
Reexamination Certificate
active
07125742
ABSTRACT:
The present invention discloses a multi-passivation layer structure for organic thin-film transistors and a method for fabricating the same by spin coating, inject printing, screen printing and micro-contact on organic thin-film transistors. The multi-passivation layer structure for organic thin-film transistors, comprising: a substrate; a gate layer formed on the substrate; an insulator layer formed on the substrate and the gate layer; an electrode layer formed on the insulator layer; a semiconductor layer formed on the insulator layer and the electrode layer; and a passivation layer formed on the semiconductor layer and the electrode layer, thereby forming a multi-passivation layer structure for organic thin-film transistors.
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Ho Jia-Chong
Hsieh Cheng-Chung
Hu Tarng-Shiang
Huang Liang-Ying
Huang Wen-Kuei
Anya Igwe U.
Baumeister B. William
Industrial Technology Research Institute
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