Multi-pass programming for memory using word line coupling

Details Multi-pass programming for memory using word line coupling Multi-pass programming for memory using word line coupling

2008-10-16

2010-11-23

Nguyen, Tuan T. (Department: 2824)

Static information storage and retrieval

Floating gate

Particular connection

C365S185220, C365S185240

Reexamination Certificate

active

07839687

ABSTRACT:
A multiple pass programming scheme is optimized using capacitive coupling in the word line to word line direction during program-verify operations. A different pass voltage is used in different programming passes on an adjacent word line of a selected word line which is being verified. In particular, a lower pass voltage can be used in a first pass than in a second pass. The programming process may involve a word line look ahead or zigzag sequence in which WLn is programmed in a first pass, followed by WLn+1 in a first pass, followed by WLn in a second pass, followed by WLn+1 in a second pass. An initial programming pass may be performed before the first pass in which storage elements are programmed to an intermediate state and/or to a highest state.

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International Search Report and Written Opinion of the International Searching Authority dated Dec. 3, 2009 in PCT Application No. PCT/2009/057984.

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