Multi-mode power amplifier with low gain variation over...

Details Multi-mode power amplifier with low gain variation over... Multi-mode power amplifier with low gain variation over...

2007-03-07

2009-06-30

Shingleton, Michael B (Department: 2815)

Amplifiers

With semiconductor amplifying device

Including temperature compensation means

C455S073000, C330S12400D, C330S12400D, C330S278000

Reexamination Certificate

active

07554407

ABSTRACT:
A multi-mode RF amplifier is described having at least a higher and a lower power path coupling an input to an output. At a pre-selected output power level, the higher power path is enabled while the lower power path is disabled when more output power is required. The process is reversed when less power is needed. The present invention matches the power gain variation over temperature characteristic of each path such that, especially at the cross over point, the gain delta (the difference in power gain between the two paths) has minimal variation over temperature. Such power gain characteristic is required for meeting the test requirements, specifically the inner loop power control, for third generation (3G) cellular handsets.

REFERENCES:
patent: 5051706 (1991-09-01), Zushi
patent: 6791407 (2004-09-01), Grebennikov et al.
patent: 6937102 (2005-08-01), Lopez et al.
patent: 6946911 (2005-09-01), Yang et al.
patent: 7342455 (2008-03-01), Behzad et al.
Miceli, Andrew, In-Field Testing, printout from TelephonyOnline, Sep. 15, 1998.
Muhammad, Faris et al., Testing of cellular handsets poses unique challenges: moving between a 2G/2.5G network and 3G network means crossing some potentially difficult barriers. Making it seamless, the user is the goal. (Designer's Notebook), Pennwell Publishing Corp., Nov. 1, 2004.
Tanner, Rudolf et al., HSDPA helps take 3G to where it belongs, Printout from Mobilehandsetdesignline.com, Nov. 21, 2005.

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