Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Patent
1995-07-17
1998-12-08
Loke, Steven H.
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
257758, 257763, 257764, 257765, 257768, 257741, 438653, 438656, H01L 2976, H01L 2348, H01L 27108
Patent
active
058474595
ABSTRACT:
A multi-level wiring structure having: a first wiring formed on an insulating surface, the first wiring containing refractory metal as a main composition thereof; an inter-level insulating film formed to cover the first wiring and having a contact hole at a predetermined region of the first wiring; a second wiring formed over said inter-level insulating film to be electrically connected to an upper surface of the first wiring at a region of the contact hole, the second wiring containing Al as a main composition thereof; and a barrier layer disposed at an interface where the first and second wirings are electrically connected, the barrier layer being made of a material different from, and substantially not reacting with, both Al and the refractory metal constituting the main composition of the first wiring. It is possible to suppress an increase of contact resistance between an upper level wiring and a lower level wiring even if refractory metal is used as the lower level wiring and heat treatment is performed after the upper level wiring is formed.
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Fujitsu Limited
Loke Steven H.
Williams Alexander Oscar
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