Static information storage and retrieval – Read only systems – Fusible
Patent
1994-06-30
1995-11-21
Nelms, David C.
Static information storage and retrieval
Read only systems
Fusible
365103, 3652257, 257530, 257 50, G11C 1700
Patent
active
054693799
ABSTRACT:
A method and system for programming vROM programmable memories using antifuses fabricated from undoped amorphous silicon as a high resistance link or layer between two metal layers. Whenever a programming voltage higher than a normal operating voltage is applied across the link between the two metal layers, the resistance of the link is reduced by transforming the insulating amorphous silicon into conducting polysilicon. This causes a closed or conductive link to be formed between the two metal layers. In the programming of the vROM, current is actively pumped to the link; and a current measurement or check is made prior to the application of the programming voltage to determine whether the link already has been programmed. Immediately following the application of the programming voltage, the current through the link again is checked to determine proper programming of the link. The system and method provide a continuous verification of the proper programming of the link, including an indication of whether a weak or incomplete programming of a link takes place.
REFERENCES:
patent: 5008855 (1991-04-01), Eltoukhy et al.
patent: 5272388 (1993-12-01), Bakker
patent: 5371414 (1994-12-01), Galbraith
Le Vu A.
Nelms David C.
Ptak LaValle D.
VLSI Technology Inc.
LandOfFree
Multi-level vROM programming method and circuit does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Multi-level vROM programming method and circuit, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Multi-level vROM programming method and circuit will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1142887