Multi level sensing of NAND memory cells by external bias curren

Details Multi level sensing of NAND memory cells by external bias curren Multi level sensing of NAND memory cells by external bias curren

1999-09-02

2000-10-31

Nelms, David

Static information storage and retrieval

Floating gate

Multiple values

36518517, 36518518, 365121, G11C 1604

Patent

active

061412449

ABSTRACT:
A method and circuit for sensing multi states of a NAND memory cell by applying plurality of external sensing bias current at a constant positive gate and bias voltage and detecting a cell current wherein the cell current depends upon the state of the memory cell.

REFERENCES:
patent: 5539690 (1996-07-01), Talreja et al.
patent: 5594691 (1997-01-01), Bashir
patent: 5748546 (1998-05-01), Bauer et al.
patent: 5751634 (1998-05-01), Itoh et al.
patent: 5973957 (1999-10-01), Tedrow

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