Multi-level phase change memory

Details Multi-level phase change memory Multi-level phase change memory

2011-03-22

2011-03-22

Smith, Bradley K (Department: 2894)

Active solid-state devices (e.g., transistors, solid-state diode

Bulk effect device

Bulk effect switching in amorphous material

C257S003000, C257S004000, C257S005000, C438S800000, C438S900000

Reexamination Certificate

active

07910904

ABSTRACT:
A phase change memory may be formed which is amenable to multilevel programming. The phase change material may be formed with a lateral extent which does not exceed the lateral extent of an underlying heater. As a result, the possibility of current bypassing the amorphous phase change material in the reset state is reduced, reducing the programming current that is necessary to prevent this situation. In addition, a more controllable multilevel phase change memory may be formed in some embodiments.

REFERENCES:
patent: 6448649 (2002-09-01), Lee et al.
patent: 2002/0151105 (2002-10-01), Clampitt
patent: 2003/0146469 (2003-08-01), Matsuoka et al.
patent: 2004/0026682 (2004-02-01), Jiang
patent: 2004/0113232 (2004-06-01), Johnson et al.
patent: 2005/0029504 (2005-02-01), Karpov
patent: 2006/0246712 (2006-11-01), Kim et al.
“Heater” (1992). In Academic Press Dictionary of Science and Technology. Retrieved Jul. 10, 2008, from http://www.credoreference.com/entry/3112227.
“Pore”. (1992). In Academic Press Dictionary of Science and Technology. Retrieved Jul. 10, 2008, from http://www.credoreference.com/entry/3144918.

Affiliated with

Also associated with

Rating

Multi-level phase change memory does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Multi-level phase change memory, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Multi-level phase change memory will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2639469