Static information storage and retrieval – Floating gate – Multiple values
Reexamination Certificate
2006-07-20
2010-02-02
Nguyen, Tuan T (Department: 2824)
Static information storage and retrieval
Floating gate
Multiple values
C365S185280, C365S189020, C365S189160
Reexamination Certificate
active
07656704
ABSTRACT:
A method for programming a multi-level nitride storage memory cell capable of storing different programming states corresponding to multiple different threshold voltage levels includes providing a variable resistance capable of providing a plurality of different resistance values; connecting a drain side of the nitride storage memory cell to a selected one of the plurality of resistance values that corresponds to one of the multiple threshold voltage levels; and programming the nitride storage memory cell to store one of the program states corresponding to the one of the threshold voltage levels by applying a programming voltage to the drain side through the selected resistance.
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Chen Po-An
Chuang Tzu-Ching
Liao Hsiu-Han
Yang Yu-Kuo
Finnegan Henderson Farabow Garrett & Dunner LLP
Nguyen Tuan T
Sofocleous Alexander
Winbond Electronics Corp.
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