Multi-level nonvolatile semiconductor memory device...

Static information storage and retrieval – Floating gate – Multiple values

Reexamination Certificate

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C365S230060, C365S185110, C365S230030, C711S200000, C711S202000, C711S103000

Reexamination Certificate

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10936615

ABSTRACT:
A multi-level semiconductor memory device for storing multi-level data having three or more values is implemented by utilizing a nonvolatile memory device for storing 2-valued data. Identification of successive 16-bit data externally applied is performed with external address bit AA [2], and a storage block is selected with external address bit AA [23]. Upper word data LW and lower word data UW are compressed into byte data of 8 bits, respectively, and stored in a memory cell array.

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