Static information storage and retrieval – Floating gate – Multiple values
Reexamination Certificate
2007-01-16
2007-01-16
Hur, J. H. (Department: 2824)
Static information storage and retrieval
Floating gate
Multiple values
C365S230060, C365S185110, C365S230030, C711S200000, C711S202000, C711S103000
Reexamination Certificate
active
10936615
ABSTRACT:
A multi-level semiconductor memory device for storing multi-level data having three or more values is implemented by utilizing a nonvolatile memory device for storing 2-valued data. Identification of successive 16-bit data externally applied is performed with external address bit AA [2], and a storage block is selected with external address bit AA [23]. Upper word data LW and lower word data UW are compressed into byte data of 8 bits, respectively, and stored in a memory cell array.
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Mitani Hidenori
Ogura Taku
Yamauchi Tadaaki
Hur J. H.
McDermott Will & Emery LLP
Renesas Technology Corp.
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