Multi-level non-volatile semiconductor memory device having impr

Details Multi-level non-volatile semiconductor memory device having impr Multi-level non-volatile semiconductor memory device having impr

1997-06-26

1998-12-08

Mai, Son

Static information storage and retrieval

Floating gate

Multiple values

36518517, 36518521, G11C 1604, G11C 1606

Patent

active

058479929

ABSTRACT:
A multi-value storing EEPROM having data-storing circuits, each storing a control data item which determines a write-control voltage to be applied to one bit line in order to write data into any memory cell connected to the bit line. The write-control voltage is applied to the bit line to write data into the memory cell, on the basis of the control data item stored in the data-storing circuit. To read the data from the cells, a bit-line signal is supplied to the bit line in accordance with the control data item stored in the data-storing circuit. To achieve write verification, the value of the bit-line signal on the bit line is detected from the data-storing state the memory cell assumes. The control data item stored in the circuit can be changed on the basis of the data-storing state of the memory cell.

REFERENCES:
patent: 5521865 (1996-05-01), Ohuchi et al.
patent: 5570315 (1996-10-01), Tanaka et al.
patent: 5602789 (1997-02-01), Endoh et al.

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