Multi-level memory cell sensing

Details Multi-level memory cell sensing Multi-level memory cell sensing

2005-12-28

2009-06-23

Nguyen, VanThu (Department: 2824)

Static information storage and retrieval

Floating gate

Particular biasing

C365S185030, C365S185210

Reexamination Certificate

active

07551489

ABSTRACT:
A multi-level cell memory device performs a read by providing a stepped voltage waveform on a wordline, and comparing cell currents to a substantially constant reference current. Prior to the application of the stepped voltage waveform, the wordline may share charge with another circuit node.

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