Multi-level memory cell programming methods

Details Multi-level memory cell programming methods Multi-level memory cell programming methods

2008-02-08

2009-12-29

Luu, Pho M. (Department: 2824)

Static information storage and retrieval

Floating gate

Multiple values

C365S185180, C365S185240, C365S189090, C365S210120

Reexamination Certificate

active

07639533

ABSTRACT:
A method for programming a plurality of multi-level memory cells described herein includes iteratively changing a bias voltage applied to a first memory cell to program the first memory cell to a first threshold state and detecting when the first cell reaches a predetermined threshold voltage. The bias voltage applied to the first memory cell upon reaching the predetermined threshold voltage is recorded. A second memory cell is programmed to a second threshold state by applying an initial bias voltage to the second memory cell which is function of the recorded bias voltage.

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